| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,224 pcs
|
4224 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
|
1,745 pcs
|
1745 pcs | On Request | 1 | On Request | On Request | 705 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB5NK52ZD-1 is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 520V and a continuous drain current (Id) of 4.4A at 25°C (Tc). It offers a maximum on-resistance (Rds On) of 1.5 Ohms at 2.2A and 10V gate drive voltage.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 70W (Tc). Key electrical parameters include a gate charge (Qg) of 16.9 nC (max) at 10V and an input capacitance (Ciss) of 529 pF (max) at 25V.
The device is housed in an I2PAK package and supports through-hole mounting. It is classified under MOSFET (Metal Oxide) technology and is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 520V.
The continuous drain current (Id) is 4.4A.
The maximum on-resistance (Rds On) is 1.5 Ohms.
The operating temperature range is -55°C to 150°C.
It is supplied in an I2PAK package.
It is a through-hole mounted component.