| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 1042 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB5N62K3 is an N-channel MOSFET manufactured by STMicroelectronics. This component is designed for switching applications and features a high drain-source breakdown voltage of 620V. It can handle a continuous drain current of up to 4.2A at a case temperature (Tc) and has a maximum on-resistance of 1.6 Ohms at 2.1A and 10V gate-source voltage.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 70W (Tc) and a gate charge of 26 nC at 10V. The input capacitance (Ciss) is 680 pF at 50V.
This device utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 4.5V at 50µA. The maximum gate-source voltage is ±30V. The STB5N62K3 is supplied in a surface mount D2PAK (TO-263) package, making it suitable for various electronic designs.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status. These attributes are based on existing database information and require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
620 V.
4.2 A at case temperature Tc.
1.6 Ohm maximum at 2.1A, 10V.
-55°C to 150°C junction temperature.
TO-263-3, D2PAK surface mount.
Maximum 4.5V at 50µA.
680 pF at 50V.