| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
64,000 pcs
|
64000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB55NF06LT4 is a high-performance N-Channel MOSFET designed for various power switching applications. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 55A at 25°C case temperature, with a maximum power dissipation of 95W.
This MOSFET offers a low on-resistance (Rds On) of 18mOhm at 27.5A and 10V gate-source voltage, ensuring efficient power transfer. The gate charge (Qg) is 37nC at 4.5V, and the input capacitance (Ciss) is 1700pF at 25V. The threshold voltage (Vgs(th)) is 4.7V at 250µA, and the maximum gate-source voltage (Vgs) is ±16V.
Packaged in a surface-mount D2PAK (TO-263-3) case, the STB55NF06LT4 is suitable for applications requiring compact and efficient power solutions. It operates within a wide temperature range of -55°C to 175°C (TJ). The technology used is MOSFET (Metal Oxide).
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are not verified by documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the STB55NF06LT4 is 60V.
The continuous drain current (Id) is 55A at 25°C case temperature.
The Rds On is a maximum of 18mOhm at 27.5A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C (TJ).
It is an N-Channel MOSFET.
It is in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
It is a surface mount device.