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STB50NE10T4 N-Channel MOSFET with 100V drain-source voltage and 50A continuous drain current. Features 27mOhm on-resistance at 10V gate drive, in a D2PAK surface-mount package.
Mfr Part #:

STB50NE10T4

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel MOSFET with 100V drain-source voltage and 50A continuous drain current. Features 27mOhm on-resistance at 10V gate drive, in a D2PAK surface-mount package.
✓ Total Stock: 3,243 pcs
$ Price Range: $2.56

STB50NE10T4 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
243 pcs
On Request
243 pcs On Request 1 On Request On Request 434 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STB50NE10T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB50NE10T4 Description

Short technical summary and product information.

The STB50NE10T4 is an N-Channel MOSFET from STMicroelectronics designed for power switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 50A. The on-resistance is typically 27mOhm at a gate drive voltage of 10V and a drain current of 25A. The gate threshold voltage is 4V at 250µA. The device can dissipate up to 180W of power and operates over a junction temperature range of -65°C to 175°C. Input capacitance is 6000pF at 25V, and total gate charge is 166nC at 10V. The MOSFET is housed in a surface-mount D2PAK (TO-263-3) package, suitable for automated assembly. These characteristics make it suitable for high-efficiency power conversion, DC-DC converters, and motor control circuits.

STB50NE10T4 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: STB50NE10T4 N-Channel MOSFET, 100V, 50A, D2PAK
Subcategory: N-Channel MOSFET

STB50NE10T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB50NE10T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB50NE10T4 Features

  • 100V drain-source voltage rating.
  • 50A continuous drain current capability.
  • 27mOhm on-resistance at 10V gate drive.
  • Surface-mount D2PAK package.
  • Operating temperature range -65°C to 175°C.

STB50NE10T4 Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Applicable in battery management systems.

STB50NE10T4 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STB50NE10T4?

100V.

What is the package type of the STB50NE10T4?

D2PAK (TO-263-3).

What is the operating temperature range?

-65°C to 175°C (junction).

What is the on-resistance of the STB50NE10T4?

27mOhm maximum at 25A and 10V gate drive.

What is the gate charge of the STB50NE10T4?

166nC maximum at 10V gate voltage.

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