STB4NK60Z-1 The STMicroelectronics STB4NK60Z-1 is an N-Channel MOSFET designed for 600V operation with a continuous drain current of 4A. It features a low Rds On of 2 Ohm at 2A, 10V.
Mfr Part #:

STB4NK60Z-1

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB4NK60Z-1 is an N-Channel MOSFET designed for 600V operation with a continuous drain current of 4A. It features a low Rds On of 2 Ohm at 2A, 10V.
✓ Total Stock: 7,942 pcs
$ Price Range: $2.56

STB4NK60Z-1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,000 pcs
7000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
942 pcs
942 pcs On Request 1 On Request On Request 17+ On Request On Request

STB4NK60Z-1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB4NK60Z-1 Description

Short technical summary and product information.

The STMicroelectronics STB4NK60Z-1 is a single N-Channel MOSFET belonging to the MOSFET technology family. It is rated for a Drain to Source Voltage (Vdss) of 600V and can handle a continuous drain current of 4A (Tc).

 

Key electrical characteristics include a maximum Gate to Source Voltage (Vgs) of ±30V and a Gate Threshold Voltage (Vgs(th)) of 4.5V at 50µA. The input capacitance (Ciss) is 510 pF at 25V, and the gate charge (Qg) is a maximum of 26 nC at 10V. The device offers a low on-resistance (Rds On) of 2 Ohm at 2A, 10V.

 

With a maximum power dissipation of 70W (Tc) and an operating temperature range of up to 150°C (TJ), this MOSFET is suitable for various power applications. It is mounted via a Through Hole method and comes in a TO-262-3 Long Leads, I²Pak, TO-262AA package, also referred to as I2PAK by the supplier.

 

Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. However, these compliance details are derived from precomputed data with low confidence and should be verified.

STB4NK60Z-1 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB4NK60Z-1 N-Channel MOSFET
Subcategory: Single

STB4NK60Z-1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

STB4NK60Z-1 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB4NK60Z-1 Features

  • 600V Drain to Source Voltage (Vdss).
  • 4A continuous drain current capability.
  • Low 2 Ohm Rds On at 2A, 10V.
  • TO-262-3 Long Leads, I²Pak package.
  • Through hole mounting type.

STB4NK60Z-1 Applications

  • Suitable for power switching applications.
  • Used in high voltage circuits.
  • Ideal for power supply designs.
  • Component in motor control systems.

STB4NK60Z-1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

600V.

What package is the STB4NK60Z-1 available in?

TO-262-3 Long Leads (I2PAK) through-hole package.

What is the maximum operating junction temperature?

150°C.

What is the continuous drain current rating?

4A.

What is the on-resistance?

2 Ohms at 2A and 10V gate-source voltage.

What is the gate threshold voltage?

4.5V at 50µA drain current.

What is the gate charge?

26nC at 10V gate-source voltage.

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