| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB47N60DM6AG is an automotive-grade N-channel 600V MOSFET manufactured by STMicroelectronics. It is designed for high-voltage power switching applications and offers a maximum drain-to-source voltage of 600V, a continuous drain current of 36A, and a low on-resistance of 80mOhm at 10V gate drive. The device features a gate threshold voltage of 4.75V and a maximum gate-to-source voltage of ±25V.
With a maximum power dissipation of 250W and an operating junction temperature range of -55°C to 150°C, this MOSFET is suitable for demanding environments. The input capacitance is 2350pF at 100V, and the total gate charge is 55nC at 10V, enabling efficient switching performance.
The MOSFET is housed in a surface-mount D²PAK (TO-263) package, which is widely used in automotive and industrial power systems. The automotive-grade designation ensures reliability for applications such as DC-DC converters, motor drives, and power inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum continuous drain current is 36A at case temperature.
The maximum on-resistance is 80mOhm at 18A and 10V gate drive.
The operating junction temperature range is -55°C to 150°C.
The device is available in a surface-mount D²PAK (TO-263) package.
The maximum total gate charge is 55nC at 10V.
The maximum power dissipation is 250W at case temperature.