| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB45N65M5 is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vdss) of 650V and can handle a continuous drain current (Id) of 35A at case temperature.
With a low on-resistance (Rds On) of 78mOhm at 19.5A and 10Vgs, this MOSFET offers efficient power handling. The input capacitance (Ciss) is 3375pF at 100V, and the gate charge (Qg) is 91nC at 10Vgs. The gate threshold voltage (Vgs(th)) is 5V at 250µA, with a maximum gate-source voltage of ±25V.
This device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 210W (Tc). It utilizes MOSFET (Metal Oxide) technology.
The STB45N65M5 comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current (Id) is 35A at case temperature.
The Rds On (Max) is 78mOhm at 19.5A drain current and 10V gate-source voltage.
The operating temperature (TJ) is up to 150°C.
It is in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
It is a surface mount device.