| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB45N50DM2AG is a single N-Channel MOSFET belonging to the MOSFET technology family. It is designed for power switching applications with a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 35A.
Key electrical characteristics include a maximum on-resistance (Rds On) of 84mOhm at 17.5A and 10V gate drive, a gate charge (Qg) of 57nC at 10V, and an input capacitance (Ciss) of 2600pF at 100V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-to-source voltage is ±25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 250W (Tc). It is housed in a Surface Mount D2PAK (TO-263) package, suitable for various electronic designs.
The STB45N50DM2AG is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
35A at case temperature (Tc).
TO-263-3 (D²Pak) surface mount package.
-55°C to 150°C junction temperature.
84mOhm maximum at 17.5A drain current and 10V gate drive.
57nC at 10V gate drive.
2600pF at 100V drain-source voltage.