STB45N30M5 The STMicroelectronics STB45N30M5 is an N-Channel MOSFET designed for high-power applications. It features a 300V drain-source voltage and a 53A continuous drain current.
Mfr Part #:

STB45N30M5

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB45N30M5 is an N-Channel MOSFET designed for high-power applications. It features a 300V drain-source voltage and a 53A continuous drain current.
✓ Total Stock: 6,444 pcs
$ Price Range: $2.56

STB45N30M5 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,798 pcs
3798 pcs On Request 1 On Request On Request 18+ On Request On Request
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1,646 pcs
1646 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

STB45N30M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB45N30M5 Description

Short technical summary and product information.

The STMicroelectronics STB45N30M5 is a single N-Channel MOSFET belonging to the discrete semiconductor product category. It is designed for demanding applications requiring high voltage and current handling capabilities.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 300V and a continuous drain current (Id) of 53A at a case temperature. The on-resistance (Rds On) is rated at a maximum of 40mOhm at 26.5A and 10V gate-source voltage. Input capacitance (Ciss) is 4240 pF at 100V, and gate charge (Qg) is 95 nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It utilizes MOSFET (Metal Oxide) technology and is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB format, suitable for surface mounting.

 

With a maximum power dissipation of 250W (Tc), the STB45N30M5 is engineered for reliability in power management circuits.

STB45N30M5 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB45N30M5 N-Channel MOSFET
Subcategory: Single

STB45N30M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB45N30M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB45N30M5 Features

  • 300V drain-to-source voltage.
  • 53A continuous drain current.
  • 40mOhm maximum on-resistance.
  • Surface mount TO-263 package.
  • Operates to 150°C.

STB45N30M5 Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for DC-DC converters.
  • Applicable in power management systems.

STB45N30M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STB45N30M5?

300V.

What is the package type of the STB45N30M5?

TO-263-3 (D²Pak) surface-mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the gate threshold voltage?

5V at 250µA.

What is the on-resistance?

40mOhm maximum at 26.5A, 10V.

What is the continuous drain current rating?

53A at case temperature.

What is the total gate charge?

95nC at 10V.

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