| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB42N65M5 is a power MOSFET featuring an N-Channel configuration. It is designed for high voltage applications with a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 33A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 79mOhm at 16.5A and 10V gate-source voltage, and a gate charge (Qg) of 100nC at 10V. The device has a gate threshold voltage (Vgs(th)) of 5V at 250µA and can withstand a maximum gate-source voltage of ±25V.
This MOSFET operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 190W. It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.
The STB42N65M5 is specified with RoHS3 compliance and an MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
D2PAK (TO-263) surface-mount package.
150°C.
79mOhm maximum at 16.5A and 10V gate drive.
100nC at 10V gate voltage.
4650pF at 100V drain-source voltage.
190W at case temperature.