STB42N60M2-EP The STMicroelectronics STB42N60M2-EP is an N-channel Power MOSFET designed for high-frequency switching applications. It offers a 600V drain-source voltage and 34A continuous current capability.
Mfr Part #:

STB42N60M2-EP

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB42N60M2-EP is an N-channel Power MOSFET designed for high-frequency switching applications. It offers a 600V drain-source voltage and 34A continuous current capability.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB42N60M2-EP Available from 1 distributor

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✓ Non-Authorised
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STB42N60M2-EP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB42N60M2-EP Description

Short technical summary and product information.

This STMicroelectronics STB42N60M2-EP is an N-channel Power MOSFET utilizing MDmesh™ M2 EP technology. It is designed for demanding very high frequency converters, operating at frequencies greater than 150 kHz.

 

The device features a 600V drain-to-source voltage (Vdss) and a maximum continuous drain current of 34A at 25°C case temperature. Its on-resistance (Rds(on)) is a maximum of 87mOhm at 17A and 10V gate-source voltage. The MOSFET exhibits extremely low gate charge and very low turn-off switching losses, making it suitable for high-efficiency power applications.

 

Packaged in a surface-mount D²PAK (TO-263) package, the STB42N60M2-EP is designed for robust thermal performance with a maximum power dissipation of 250W at 25°C case temperature. The operating junction temperature is rated up to 150°C.

 

Key electrical characteristics include a gate charge of 55 nC at 10V and an input capacitance of 2370 pF at 100V. The gate-source voltage maximum is ±25V, and the gate threshold voltage is 4.75V at 250µA.

STB42N60M2-EP Quick Information

Product Type: Power MOSFET
Canonical Name: STMicroelectronics STB42N60M2-EP N-Channel Power MOSFET
Subcategory: N-Channel

STB42N60M2-EP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB42N60M2-EP Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB42N60M2-EP Features

  • N-channel Power MOSFET technology.
  • 600V drain-to-source voltage rating.
  • 34A continuous drain current.
  • Low on-resistance of 87mOhm max.
  • Surface mount D2PAK package.

STB42N60M2-EP Applications

  • Switching power supplies and adapters.
  • Motor control and inverter circuits.
  • High-frequency DC-DC converters.
  • Lighting and LED driver applications.

STB42N60M2-EP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

600V.

What is the continuous drain current rating?

34A at 25°C case temperature.

What is the typical on-resistance?

87 mOhm maximum at 17A and 10V gate drive.

What is the gate charge?

55 nC at 10V gate-source voltage.

What is the maximum operating junction temperature?

150°C.

What is the package type?

D2PAK (TO-263) surface-mount package.

What is the gate threshold voltage?

4.75V maximum at 250µA drain current.

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