| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB40NF10LT4 is a single N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 40A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 33mOhm at 20A and 10V, a gate charge (Qg) of 64nC at 4.5V, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The device operates within a temperature range of -65°C to 175°C (TJ).
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. Its robust design makes it suitable for various power management and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
D2PAK (TO-263-3).
-65°C to 175°C (junction temperature).
33 mOhm maximum at Id=20A, Vgs=10V.
2.5V maximum at Id=250µA.
40A at case temperature.