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STB3NK60ZT4 The STMicroelectronics STB3NK60ZT4 is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-source voltage and a 2.4A continuous current rating.
Mfr Part #:

STB3NK60ZT4

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB3NK60ZT4 is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-source voltage and a 2.4A continuous current rating.
✓ Total Stock: 40,000 pcs
$ Price Range: $2.56

STB3NK60ZT4 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
40,000 pcs
On Request
40000 pcs On Request 1 On Request On Request 10+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STB3NK60ZT4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB3NK60ZT4 Description

Short technical summary and product information.

The STMicroelectronics STB3NK60ZT4 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for power applications with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 2.4A at a case temperature (Tc).

 

Key electrical characteristics include a maximum on-state resistance (Rds On) of 3.6 Ohms at 1.2A and 10V gate-source voltage, and a gate charge (Qg) of 11.8 nC maximum at 10V. The input capacitance (Ciss) is 311 pF maximum at 25V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 45W (Tc). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.

 

The part is specified with a gate threshold voltage (Vgs(th)) of 4.5V maximum at 50µA and a maximum gate-source voltage (Vgs) of ±30V.

STB3NK60ZT4 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB3NK60ZT4 N-Channel MOSFET
Subcategory: Single

STB3NK60ZT4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

STB3NK60ZT4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB3NK60ZT4 Features

  • 600V drain-source voltage rating.
  • 2.4A continuous drain current.
  • 3.6 Ohm maximum on-state resistance.
  • Surface mount D2PAK package.
  • Wide operating temperature range.

STB3NK60ZT4 Applications

  • Used in high voltage power supplies.
  • Suitable for switching power converters.
  • Ideal for motor control circuits.
  • Employed in LED lighting drivers.
  • Applied in AC-DC and DC-DC converters.

STB3NK60ZT4 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB3NK60ZT4?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current of the STB3NK60ZT4?

The continuous drain current is 2.4A at the case temperature.

What is the maximum on-state resistance (Rds On) for this MOSFET?

The Rds On is a maximum of 3.6 Ohms when measured at 1.2A drain current and 10V gate-source voltage.

What package type is the STB3NK60ZT4 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

How is the STB3NK60ZT4 mounted?

The STB3NK60ZT4 is a surface mount device.

What is the operating temperature range for the STB3NK60ZT4?

The operating temperature range is -55°C to 150°C (TJ).

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