| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number STB36NF06LT4 from STMicroelectronics, is designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 60V and can handle a continuous current of 30A at the case temperature.
The MOSFET has a low on-resistance (Rds On) of 40mOhm at 15A and 10V gate-source voltage, with a gate charge (Qg) of 17nC at 5V Vgs. The operating temperature range is -55°C to 175°C (TJ).
Packaged in a surface-mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB format, this component is suitable for various electronic designs requiring efficient power control. The maximum power dissipation is rated at 70W (Tc).
Key electrical parameters include an input capacitance (Ciss) of 660pF at 25V Vds and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The maximum gate-source voltage is ±18V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
30A at case temperature.
40mOhm maximum at Id=15A, Vgs=10V.
17nC maximum at Vgs=5V.
660pF maximum at Vds=25V.
-55°C to 175°C (junction).
D2PAK (TO-263-3) surface mount package.