| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STB36N60M6 is an N-channel Power MOSFET utilizing MDmesh™ M6 technology. This device is designed for switching applications, offering reduced switching losses and improved efficiency. It boasts a high drain-source voltage rating of 600V and a continuous drain current capability of 30A at 25°C case temperature.
The MOSFET features a low on-resistance of 99mΩ maximum at 15A and 10V gate-source voltage, contributing to lower conduction losses. The gate charge (Qg) is 44.3 nC maximum at 10V, and the input capacitance (Ciss) is 1960 pF maximum at 100V. The device operates over a wide temperature range from -55°C to 150°C.
Packaged in a surface-mount D²PAK (TO-263) package, the STB36N60M6 is suitable for various power management designs. Its robust construction and performance characteristics make it a reliable choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 600V.
The continuous drain current is 30A at a case temperature of 25°C.
The typical on-resistance is 85 mOhm.
The operating junction temperature range is -55°C to 150°C.
The STB36N60M6 is available in a D²PAK (TO-263) surface mount package.