STB35NF10T4 The STMicroelectronics STB35NF10T4 is an N-Channel Power MOSFET designed for high-efficiency DC-DC converters. It offers a 100V drain-source voltage and 40A continuous current capability.
Mfr Part #:

STB35NF10T4

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB35NF10T4 is an N-Channel Power MOSFET designed for high-efficiency DC-DC converters. It offers a 100V drain-source voltage and 40A continuous current capability.
✓ Total Stock: 997 pcs
$ Price Range: $2.56

STB35NF10T4 Available from 1 distributor

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✓ Non-Authorised
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997 pcs
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STB35NF10T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB35NF10T4 Description

Short technical summary and product information.

The STMicroelectronics STB35NF10T4 is an N-channel Power MOSFET from the STripFET™ II series, designed for applications requiring low input capacitance and gate charge, such as advanced high-efficiency isolated DC-DC converters for telecom and computer systems.

 

This MOSFET features a drain-source breakdown voltage of 100V and a continuous drain current rating of 40A at 25°C. Its low on-resistance is specified at a maximum of 35mOhm at 17.5A and 10V gate-source voltage. The device boasts exceptional dv/dt capability and is 100% avalanche tested.

 

Packaged in a D2PAK (TO-263AB) surface-mount package, the STB35NF10T4 is suitable for automated assembly processes. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 115W at 25°C.

 

Key electrical characteristics include a gate charge of 55nC at 10V and an input capacitance of 1550pF at 25V. The threshold voltage (Vgs(th)) is 4V at 250µA. This series is application-oriented and designed for switching applications.

STB35NF10T4 Quick Information

Product Type: MOSFET
Series: STB35NF10 / STP35NF10
Canonical Name: STMicroelectronics STB35NF10T4 N-Channel Power MOSFET
Subcategory: N-Channel

STB35NF10T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB35NF10T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB35NF10T4 Features

  • N-Channel STripFET™ II Power MOSFET.
  • 100V drain-source breakdown voltage.
  • 40A continuous drain current.
  • Low Rds On of 35mOhm.
  • D2PAK surface mount package.

STB35NF10T4 Applications

  • Suitable for DC-DC converters.
  • Designed for switching applications.
  • Ideal for telecom applications.
  • Used in computer applications.

STB35NF10T4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STB35NF10T4?

The drain-source voltage rating is 100V.

What is the maximum continuous drain current of the STB35NF10T4?

The maximum continuous drain current is 40A at 25°C case temperature.

What is the on-resistance of the STB35NF10T4?

The maximum on-resistance is 35mOhm at Vgs = 10V and Id = 17.5A.

What package does the STB35NF10T4 come in?

The STB35NF10T4 is supplied in a D2PAK (TO-263) surface mount package.

What is the operating temperature range of the STB35NF10T4?

The operating junction temperature range is -55°C to 175°C.

What is the gate charge of the STB35NF10T4?

The maximum gate charge is 55nC at Vgs = 10V.

What is the input capacitance of the STB35NF10T4?

The maximum input capacitance is 1550pF at Vds = 25V.

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