| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB35N65M5 is an N-channel MOSFET with a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 27A at 25°C (Tc). It offers a maximum on-resistance (Rds On) of 98mOhm at 13.5A and 10V gate-source voltage, ensuring efficient power transfer with reduced conduction losses.
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a surface-mount D2PAK package (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB). The operating junction temperature ranges from -55°C to 150°C, with a maximum power dissipation of 160W (Tc). Key electrical characteristics include a gate charge (Qg) of 83 nC at 10V and a gate threshold voltage (Vgs(th)) of 5V at 250µA. The maximum gate-source voltage is ±25V, and the input capacitance (Ciss) is 3750 pF at 100V.
The STB35N65M5 is suitable for various power switching applications due to its robust electrical specifications and surface-mount package, which facilitates compact designs and efficient heat dissipation. Its compliance with RoHS3 standards indicates adherence to environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
Surface-mount D2PAK (TO-263-3) package.
150°C.
27A at 25°C case temperature.
98mOhm maximum at 13.5A and 10V gate drive.
83nC maximum at 10V gate-source voltage.
160W at case temperature.