STB35N60DM2 The STB35N60DM2 is an N-channel Power MOSFET from STMicroelectronics designed for high efficiency converters. It features a 600V drain-source voltage and 28A continuous drain current.
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STB35N60DM2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STB35N60DM2 is an N-channel Power MOSFET from STMicroelectronics designed for high efficiency converters. It features a 600V drain-source voltage and 28A continuous drain current.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.56

STB35N60DM2 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

STB35N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB35N60DM2 Description

Short technical summary and product information.

The STB35N60DM2 is a high voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. It offers a drain-source voltage of 600V and a continuous drain current of 28A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance of 0.110 Ohm maximum at 14A and 10V gate-source voltage, along with a typical on-resistance of 0.094 Ohm. It features extremely low gate charge and input capacitance, making it suitable for demanding high efficiency converters and bridge topologies.

 

The device is designed for switching applications and is 100% avalanche tested with extremely high dv/dt ruggedness. It operates within a temperature range of -55°C to 150°C (TJ).

 

The STB35N60DM2 is supplied in a surface-mount D²PAK (TO-263) package and is available on tape and reel.

STB35N60DM2 Quick Information

Product Type: Power MOSFET
Series: MDmesh™ DM2
Canonical Name: STB35N60DM2 N-channel Power MOSFET
Subcategory: N-Channel

STB35N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB35N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB35N60DM2 Features

  • 600V drain-source voltage rating.
  • 28A continuous drain current.
  • Low 0.110 Ohm maximum Rds On.
  • Extremely low gate charge.
  • Surface mount D2PAK package.

STB35N60DM2 Applications

  • Suitable for high efficiency converters.
  • Ideal for bridge topologies.
  • Used in ZVS phase-shift converters.
  • Designed for switching applications.

STB35N60DM2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of STB35N60DM2?

The maximum drain-source voltage (Vdss) is 600 V.

What package is the STB35N60DM2 available in?

It is available in TO-263-3, D2Pak (2 Leads + Tab), TO-263AB surface mount package.

What is the operating temperature range of STB35N60DM2?

The operating junction temperature range is -55°C to 150°C.

What is the continuous drain current rating of STB35N60DM2?

The continuous drain current is 28 A at case temperature 25°C, and 17 A at 100°C.

What is the maximum on-resistance of STB35N60DM2?

The maximum on-resistance is 0.110 Ohm at Vgs=10V and Id=14A.

What is the gate charge of STB35N60DM2?

The maximum gate charge (Qg) is 54 nC at Vgs=10V.

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