| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB35N60DM2 is a high voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. It offers a drain-source voltage of 600V and a continuous drain current of 28A at 25°C case temperature.
This MOSFET boasts a low on-resistance of 0.110 Ohm maximum at 14A and 10V gate-source voltage, along with a typical on-resistance of 0.094 Ohm. It features extremely low gate charge and input capacitance, making it suitable for demanding high efficiency converters and bridge topologies.
The device is designed for switching applications and is 100% avalanche tested with extremely high dv/dt ruggedness. It operates within a temperature range of -55°C to 150°C (TJ).
The STB35N60DM2 is supplied in a surface-mount D²PAK (TO-263) package and is available on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600 V.
It is available in TO-263-3, D2Pak (2 Leads + Tab), TO-263AB surface mount package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current is 28 A at case temperature 25°C, and 17 A at 100°C.
The maximum on-resistance is 0.110 Ohm at Vgs=10V and Id=14A.
The maximum gate charge (Qg) is 54 nC at Vgs=10V.