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STB34NM60ND The STMicroelectronics STB34NM60ND is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-to-source voltage and a continuous drain current of 29A.
Mfr Part #:

STB34NM60ND

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB34NM60ND is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-to-source voltage and a continuous drain current of 29A.
✓ Total Stock: 1,002 pcs
$ Price Range: $2.56

STB34NM60ND Available from 2 distributors

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1,000 pcs
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2 pcs
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STB34NM60ND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB34NM60ND Description

Short technical summary and product information.

The STMicroelectronics STB34NM60ND is an N-Channel MOSFET with a 600V drain-to-source voltage and a continuous drain current of 29A at 25°C. It offers a low on-resistance of 110mOhm at 14.5A and 10V gate drive, contributing to high efficiency and reduced conduction losses.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in a surface-mount D2PAK (TO-263) package, which facilitates compact designs and effective heat dissipation. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 190W (Tc).

 

Key electrical characteristics include a gate threshold voltage of 5V at 250µA and a maximum gate-source voltage of ±25V. The input capacitance (Ciss) is 2785 pF at 50V, and the gate charge (Qg) is 80.4 nC at 10V, supporting fast switching capabilities.

 

This component is suitable for various power switching applications, including power supplies and motor control circuits, where high voltage and current handling are required.

STB34NM60ND Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB34NM60ND N-Channel MOSFET
Subcategory: N-Channel

STB34NM60ND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB34NM60ND Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB34NM60ND Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current of 29A at 25°C.
  • Low on-resistance of 110mOhm at 14.5A, 10V.
  • Surface mount D2PAK package for efficient heat dissipation.
  • Operates up to 150°C junction temperature.

STB34NM60ND Applications

  • Suitable for power switching applications.
  • Used in switching power supplies (SMPS).
  • Applicable for power factor correction (PFC) circuits.
  • Can be used in server power supplies.
  • Appropriate for lighting ballasts.

STB34NM60ND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

600V.

What is the continuous drain current?

29A at Tc.

What is the on-resistance?

110 mOhm maximum at 14.5A, 10V.

What is the package type?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

What is the operating junction temperature?

150°C maximum.

What is the gate threshold voltage?

5V maximum at 250µA.

What is the gate charge?

80.4 nC maximum at 10V.

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