| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB34NM60N is a high-performance N-Channel MOSFET belonging to the MOSFET (Metal Oxide) technology family. It is designed for demanding power applications, featuring a maximum drain-source voltage (Vdss) of 600V and a continuous drain current rating of 29A at a case temperature (Tc).
Key electrical characteristics include a low on-resistance (Rds On) of 105mOhm at 14.5A and 10V, a gate charge (Qg) of 84 nC at 10V, and an input capacitance (Ciss) of 2722 pF at 100V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-to-source voltage is ±25V. The device operates at a maximum junction temperature of 150°C and can dissipate up to 250W at the case temperature.
This MOSFET is housed in a surface mount D2PAK (TO-263) package, making it suitable for integration into various electronic circuits. Its robust design and specifications make it a reliable choice for power switching and control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
29A at Tc.
250W at Tc.
105 mOhm maximum at 14.5A and 10V.
TO-263-3 (D2Pak) surface-mount package.
Up to 150°C.