STB33N65M2 The STMicroelectronics STB33N65M2 is an N-Channel MOSFET designed for power applications. It offers a 650V drain-source voltage and a 24A continuous drain current.
Mfr Part #:

STB33N65M2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB33N65M2 is an N-Channel MOSFET designed for power applications. It offers a 650V drain-source voltage and a 24A continuous drain current.
✓ Total Stock: 40,020 pcs
$ Price Range: $2.56

STB33N65M2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
39,020 pcs
39020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

STB33N65M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB33N65M2 Description

Short technical summary and product information.

The STMicroelectronics STB33N65M2 is an N-Channel Power MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current rating of 24A (Tc).

 

Key electrical characteristics include a maximum on-resistance of 140mOhm at 12A and 10V, a gate threshold voltage of 4V at 250µA, and a maximum gate-to-source voltage of ±25V. Input capacitance (Ciss) is rated at 1790pF at 100V, and gate charge (Qg) is 41.5nC at 10V.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 190W (Tc). It is constructed using MOSFET (Metal Oxide) technology.

 

The component is housed in a surface mount D2PAK (TO-263) package, specifically TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

STB33N65M2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB33N65M2 N-Channel MOSFET
Subcategory: N-Channel

STB33N65M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB33N65M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB33N65M2 Features

  • 650V drain-source breakdown voltage.
  • 24A continuous drain current.
  • 140mOhm maximum on-resistance.
  • Surface mount D2PAK package.
  • N-Channel MOSFET technology.

STB33N65M2 Applications

  • Power supply circuits.
  • Motor control applications.
  • Switching power supplies.
  • General purpose power switching.

STB33N65M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB33N65M2?

The maximum drain-source voltage (Vdss) is 650V.

What is the continuous drain current of the STB33N65M2?

The continuous drain current is 24A, measured at the case (Tc).

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 140mOhm when tested at 12A drain current and 10V gate-source voltage.

What is the operating temperature range for the STB33N65M2?

The operating junction temperature (TJ) can reach up to 150°C.

What package type is the STB33N65M2 supplied in?

It is supplied in a surface mount D2PAK package, specifically TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

What is the RoHS status of the STB33N65M2?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

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