STB33N60M2 The STB33N60M2 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 600V breakdown voltage and a continuous drain current of 26A.
Mfr Part #:

STB33N60M2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STB33N60M2 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 600V breakdown voltage and a continuous drain current of 26A.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB33N60M2 Available from 1 distributor

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STB33N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB33N60M2 Description

Short technical summary and product information.

The STMicroelectronics STB33N60M2 is a high-performance N-Channel MOSFET designed for various power switching applications. It features a robust 600V drain-source breakdown voltage and can handle a continuous drain current of up to 26A at a case temperature (Tc) of 25°C.

 

Key electrical characteristics include a low drain-source on-resistance (Rds On) of 125mOhm maximum at 13A and 10V gate-source voltage, ensuring efficient power transfer. The gate charge (Qg) is 45.5nC maximum at 10V, and the input capacitance (Ciss) is 1781pF at 100V, influencing switching speed.

 

This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 190W (Tc). It is housed in a surface-mount D2PAK (TO-263) package, suitable for automated assembly processes.

 

The STB33N60M2 is built using MOSFET technology and operates in enhancement mode, making it a versatile component for power supply designs, motor control, and other demanding electronic circuits.

STB33N60M2 Quick Information

Product Type: MOSFET
Series: Stb33n60
Canonical Name: STB33N60M2 N-Channel MOSFET
Subcategory: N-Channel

STB33N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB33N60M2 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB33N60M2 Features

  • 600V drain-source breakdown voltage.
  • 26A continuous drain current.
  • 125mOhm maximum Rds On.
  • Surface mount D2PAK package.
  • N-Channel MOSFET technology.

STB33N60M2 Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for switching power applications.
  • Applicable in industrial power systems.

STB33N60M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB33N60M2?

The maximum drain-source voltage is 600 V.

What is the continuous drain current rating?

The continuous drain current is 26 A.

What is the maximum power dissipation?

The maximum power dissipation is 190 W.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What is the Rds On for this MOSFET?

The maximum Rds On is 125 mOhm at 13A and 10V.

What package type is the STB33N60M2 in?

It is in a D2PAK-3 surface mount package.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

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