Mfr Part #:

STB33N60DM2

The STMicroelectronics STB33N60DM2 is a 600V N-channel Power MOSFET designed for high efficiency converters. It features low on-resistance and a D2PAK package.

✓ Total Stock: 22,000 pcs

$ Price Range: $2.56

STB33N60DM2 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	22,000 pcs On Request	22000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

STB33N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STB33N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh™ DM2 fast recovery diode series. It offers a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 24A at 25°C case temperature.

Key electrical characteristics include a low on-resistance (Rds On) of 130mΩ maximum at 12A and 10V, a gate charge (Qg) of 43nC maximum at 10V, and an input capacitance (Ciss) of 1870pF maximum at 100V. The device operates over a wide temperature range from -55°C to 150°C (TJ).

This MOSFET is available in a D²PAK (TO-263) surface mount package, making it suitable for various switching applications. Its design is optimized for high efficiency converters, bridge topologies, and ZVS phase-shift converters, offering features like fast-recovery body diode and extremely low gate charge.

Applications include demanding high efficiency converters and bridge topologies. The device is 100% avalanche tested and exhibits extremely high dv/dt ruggedness.

STB33N60DM2 Quick Information

Product Type: Power MOSFET

Series: MDmesh™ DM2

Canonical Name: STMicroelectronics STB33N60DM2 N-channel 600V 24A Power MOSFET

Subcategory: N-Channel

STB33N60DM2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STB33N60DM2 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB33N60DM2 Features

600V drain-source voltage rating.
24A continuous drain current capability.
130mOhm maximum on-resistance.
Low gate charge and input capacitance.
D2PAK surface mount package.

STB33N60DM2 Applications

Suitable for high efficiency converters.
Ideal for bridge topologies.
Used in ZVS phase-shift converters.
Designed for demanding switching applications.

STB33N60DM2 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the STB33N60DM2?

The maximum drain-source voltage (Vds) is 600 V.

What is the continuous drain current of the STB33N60DM2?

The continuous drain current is 24A at a case temperature of 25°C.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance is 130mOhm when tested at 12A drain current and 10V gate-source voltage.

What package type is the STB33N60DM2 available in?

The STB33N60DM2 is available in a D2PAK (TO-263) surface mount package.

What is the operating temperature range for the STB33N60DM2?

The operating junction temperature range is -55°C to 150°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Capacitance	1870 pF @ 100 V
Current	24A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1870 pF @ 100 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	190W (Tc)
Rds On (Max) @ Id, Vgs	130mOhm
Supplier Device Package	D²PAK (TO-263)
Supplier Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	250µA
Voltage	600 V