| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB32N65M5 is a high-performance N-Channel MOSFET designed for demanding applications. It offers a robust 650V drain-to-source voltage and a continuous drain current capability of 24A (Tc), with a maximum power dissipation of 150W (Tc).
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mount configurations. Key electrical characteristics include a gate-source voltage range of ±25V and a gate threshold voltage of 5V at 250µA. The input capacitance (Ciss) is rated at 3320 pF at 100V, and the on-resistance (Rds On) is a maximum of 119mOhm at 12A and 10V.
With an operating temperature range up to 150°C (TJ), the STB32N65M5 is suitable for various power management tasks. It is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited, and REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
D2PAK (TO-263-3).
150°C.
119mOhm at 12A and 10V gate drive.
72nC at 10V.
3320pF at 100V.
24A.