STB31N65M5 The STMicroelectronics STB31N65M5 is an N-Channel MOSFET designed for high voltage applications. It offers a 650V drain-source voltage and 22A continuous current.
Mfr Part #:

STB31N65M5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB31N65M5 is an N-Channel MOSFET designed for high voltage applications. It offers a 650V drain-source voltage and 22A continuous current.
✓ Total Stock: 3,020 pcs
$ Price Range: $2.56

STB31N65M5 Available from 1 distributor

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✓ Non-Authorised
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STB31N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB31N65M5 Description

Short technical summary and product information.

This STMicroelectronics STB31N65M5 is a single N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-to-source voltage (Vdss) of 650V and can handle a continuous drain current of 22A (Tc). The device features a maximum power dissipation of 150W (Tc) and an operating junction temperature of up to 150°C.

 

The MOSFET is designed for surface mounting and comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package. Key electrical parameters include a maximum on-resistance (Rds On) of 148mOhm at 11A and 10V, an input capacitance (Ciss) of 1865 pF at 100V, and a gate charge (Qg) of 45nC at 10V. The gate-to-source voltage (Vgs) has a maximum rating of ±25V, with a gate threshold voltage (Vgs(th)) of 5V at 250µA.

 

This component is suitable for various power switching applications where high voltage and moderate current handling are required. Its surface-mount D2PAK package facilitates integration into compact electronic designs.

STB31N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB31N65M5 N-Channel MOSFET
Subcategory: Single

STB31N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB31N65M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB31N65M5 Features

  • 650V drain-source voltage rating.
  • 22A continuous drain current.
  • 150W maximum power dissipation.
  • Surface mount D2PAK package.
  • N-Channel MOSFET technology.

STB31N65M5 Applications

  • Suitable for high voltage power supplies.
  • Used in power factor correction circuits.
  • Applicable for switch mode power supplies.
  • Ideal for motor drive applications.

STB31N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STB31N65M5?

The maximum drain-to-source voltage (Vdss) is 650 V.

What is the continuous drain current rating?

The continuous drain current is 22A (Tc).

What is the maximum power dissipation?

The maximum power dissipation is 150W (Tc).

What is the operating temperature range?

The operating temperature is up to 150°C (TJ).

What type of MOSFET is the STB31N65M5?

It is an N-Channel MOSFET.

What is the package type for this MOSFET?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

What is the mounting type?

The mounting type is Surface Mount.

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