| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The STMicroelectronics STB30NF20L is a single N-Channel MOSFET from the Metal Oxide technology family. It is designed for high-power applications with a maximum drain-source voltage (Vdss) of 200V and a continuous drain current of 30A at case temperature.
Key electrical characteristics include a low maximum on-resistance of 75mOhm at 15A and 5V gate-source voltage, and a gate charge (Qg) of 65nC at 10V. The device operates within a temperature range of -55°C to 175°C (TJ).
This MOSFET is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. Its robust design makes it suitable for various power switching applications where high voltage and current handling are required.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are based on existing database information and require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 200 V.
The maximum continuous drain current is 30 A at case temperature.
The maximum on-resistance is 75 mΩ at a drain current of 15 A and gate-to-source voltage of 5 V.
The maximum gate threshold voltage is 3 V at a drain current of 250 µA.
The maximum input capacitance is 1990 pF at a drain-to-source voltage of 25 V.
The operating junction temperature range is -55°C to 175°C.
The STB30NF20L is available in the TO-263-3 (D²Pak) package, with supplier device package D2PAK.