Mfr Part #:

STB30N80K5

The STB30N80K5 is an N-channel MOSFET from STMicroelectronics designed for high voltage applications. It features an 800V drain-to-source voltage and a 24A continuous drain current.

✓ Total Stock: 10,340 pcs

$ Price Range: $2.56

STB30N80K5 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	7,000 pcs On Request	7000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16
Xingangxin ✓ Non-Authorised Inventory information	1,340 pcs On Request	1340 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

STB30N80K5 Description

Short technical summary and product information.

The STMicroelectronics STB30N80K5 is a single N-channel MOSFET designed for power switching applications. It offers a high drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 24A at a case temperature (Tc).

Key electrical characteristics include a maximum on-resistance (Rds On) of 180mOhm at 12A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 5V at 100µA. The input capacitance (Ciss) is 1530 pF at 100V, and the gate charge (Qg) is 43 nC at 10V Vgs. The device can handle a maximum power dissipation of 250W (Tc) and operates within a temperature range of -55°C to 150°C (TJ).

This MOSFET is housed in a surface-mount D²PAK (TO-263) package, making it suitable for integration into compact electronic designs. The maximum gate-to-source voltage is ±30V.

STB30N80K5 Quick Information

Product Type: MOSFET

Canonical Name: STB30N80K5 N-Channel MOSFET

Subcategory: Single

STB30N80K5 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STB30N80K5 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB30N80K5 Features

800V drain-to-source voltage rating.
24A continuous drain current capability.
180mOhm maximum on-resistance.
Surface mount D2PAK package.
Operates up to 150°C.

STB30N80K5 Applications

High voltage power supplies.
Switch mode power supplies.
Power factor correction circuits.
Industrial power control.

STB30N80K5 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of STB30N80K5?

800V.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is this MOSFET available in?

TO-263-3 (D²Pak).

What is the gate threshold voltage?

5V maximum at 100µA.

What is the on-resistance?

180mOhm maximum at 12A, 10V.

What is the gate charge?

43nC maximum at 10V.

What is the input capacitance?

1530pF at 100V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	24A (Tc)
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1530 pF @ 100 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	250W (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 12A, 10V
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 100µA