STB30N65M5 The STMicroelectronics STB30N65M5 is an N-Channel MOSFET with a 650V drain-source voltage and 22A continuous current rating. It is designed for surface mount applications in a D2PAK package.
Mfr Part #:

STB30N65M5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB30N65M5 is an N-Channel MOSFET with a 650V drain-source voltage and 22A continuous current rating. It is designed for surface mount applications in a D2PAK package.
✓ Total Stock: 5,020 pcs
$ Price Range: $2.56

STB30N65M5 Available from 1 distributor

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✓ Non-Authorised
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STB30N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB30N65M5 Description

Short technical summary and product information.

The STMicroelectronics STB30N65M5 is a high-performance N-Channel Power MOSFET. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 22A at a case temperature (Tc) of 25°C. The on-resistance (Rds On) is a maximum of 139mOhm at 11A and 10V gate-source voltage.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. It operates at a maximum junction temperature (Tj) of 150°C and has a maximum power dissipation of 140W (Tc).

 

Key electrical characteristics include a gate charge (Qg) of 64nC maximum at 10V and an input capacitance (Ciss) of 2880pF maximum at 100V. The gate-to-source voltage (Vgs) has a maximum rating of ±25V, and the gate threshold voltage (Vgs(th)) is 5V maximum at 250µA.

 

The STB30N65M5 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. Its robust design makes it suitable for various power switching applications.

STB30N65M5 Quick Information

Product Type: MOSFET
Series: MDmesh M5
Canonical Name: STMicroelectronics STB30N65M5 N-Channel MOSFET
Subcategory: Single

STB30N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB30N65M5 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB30N65M5 Features

  • 650V drain-source voltage rating.
  • 22A continuous drain current.
  • 139mOhm maximum on-resistance.
  • Surface mount D2PAK package.
  • RoHS3 compliant.

STB30N65M5 Applications

  • Suitable for high voltage power switching.
  • Used in power supply designs.
  • Ideal for motor control circuits.
  • Applicable in industrial power systems.

STB30N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB30N65M5?

The maximum drain-source voltage (Vdss) is 650V.

What is the continuous drain current rating?

The continuous drain current (Id) is 22A at the case temperature.

What is the maximum on-resistance (Rds On)?

The maximum Rds On is 139mOhm when measured at 11A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the STB30N65M5 available in?

It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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