STB30N65M2AG The STB30N65M2AG is an N-Channel MOSFET from STMicroelectronics designed for high voltage applications. It features a 650V drain-source voltage and a 20A continuous drain current.
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STB30N65M2AG

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STB30N65M2AG is an N-Channel MOSFET from STMicroelectronics designed for high voltage applications. It features a 650V drain-source voltage and a 20A continuous drain current.
✓ Total Stock: 7,020 pcs
$ Price Range: $2.56

STB30N65M2AG Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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6,020 pcs
6020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
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STB30N65M2AG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB30N65M2AG Description

Short technical summary and product information.

The STB30N65M2AG is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications, offering a high drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 20A at a case temperature (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 180mOhm at 10A and 10V, a gate charge (Qg) of 30.8nC at 10V, and an input capacitance (Ciss) of 1440pF at 100V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, with a maximum gate-source voltage (Vgs) of ±25V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and comes in a Surface Mount D2PAK package (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB). The maximum power dissipation is rated at 190W (Tc).

 

The STB30N65M2AG is RoHS3 Compliant, has an MSL of 1 Unlimited, and is REACH Unaffected. It is suitable for various power electronics designs requiring high voltage and current handling capabilities.

STB30N65M2AG Quick Information

Product Type: MOSFET
Canonical Name: STB30N65M2AG N-Channel MOSFET
Subcategory: N-Channel MOSFET

STB30N65M2AG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB30N65M2AG Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB30N65M2AG Features

  • 650V drain-source voltage rating.
  • 20A continuous drain current.
  • 180mOhm maximum on-resistance.
  • Surface mount D2PAK package.
  • RoHS3 compliant.

STB30N65M2AG Applications

  • Ideal for high-voltage power supplies.
  • Suitable for motor control circuits.
  • Used in power factor correction.
  • Applicable in industrial power systems.

STB30N65M2AG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vdss) for the STB30N65M2AG MOSFET?

The drain-source voltage (Vdss) for the STB30N65M2AG MOSFET is 650 V.

What is the continuous drain current for the STB30N65M2AG?

The continuous drain current for the STB30N65M2AG is 20 A.

What is the maximum on-resistance (Rds On) of the STB30N65M2AG?

The maximum on-resistance (Rds On) of the STB30N65M2AG is 180 mOhm at 10A and 10V.

What is the operating temperature range for the STB30N65M2AG?

The operating temperature range for the STB30N65M2AG is -55°C to 150°C (TJ).

What type of MOSFET is the STB30N65M2AG?

The STB30N65M2AG is an N-Channel MOSFET.

What package is the STB30N65M2AG MOSFET supplied in?

The STB30N65M2AG MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

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