| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB30N65DM6AG is an automotive-grade N-Channel MOSFET designed for high-voltage applications. It offers a drain-to-source voltage (Vdss) of 650V and a continuous drain current of 28A at a case temperature (Tc).
This MOSFET has a maximum power dissipation of 223W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a maximum gate charge (Qg) of 46nC at 10V and an input capacitance (Ciss) of 2000pF at 100V. The Rds On is specified at a maximum of 115mOhm at 10A and 10V.
Packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB format, this device is designed for surface mounting. The maximum gate source voltage (Vgs) is ±25V, and the gate threshold voltage (Vgs(th)) is 4.75V at 250µA.
This component utilizes MOSFET (Metal Oxide) technology and is suitable for various power management applications requiring high voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
-55°C to 150°C (junction temperature).
TO-263-3 (D²Pak) surface-mount package.
28A at Tc.
115mOhm maximum at Id=10A, Vgs=10V.
46nC maximum at Vgs=10V.
2000pF maximum at Vds=100V.