| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB28NM60ND is an N-channel Power MOSFET from the FDmesh II family, utilizing MDmesh technology. This device is rated for a 600V drain-source voltage and can handle a continuous drain current of 23A at 25°C case temperature. It offers a low on-resistance of 150mOhm maximum at 11.5A and 10V gate-source voltage, with a gate charge of 62.5 nC maximum.
Designed for switching applications, this MOSFET is suitable for bridge topologies and ZVS phase-shift converters. It features an intrinsic fast-recovery body diode and is 100% avalanche tested. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 190W.
The STB28NM60ND is available in a surface-mount D²PAK (TO-263) package, making it suitable for various board layouts. Its key electrical characteristics include a gate-source voltage range of ±25V and a gate threshold voltage of 5V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V, with a maximum rating of 650V at junction temperature.
The device is available in a D²PAK (TO-263) surface mount package, also known as TO-263-3 or D²Pak.
The maximum junction temperature is 150°C.
The maximum continuous drain current is 23A at a case temperature of 25°C.
The maximum on-resistance is 150mOhm at a drain current of 11.5A and gate-source voltage of 10V.
The maximum gate threshold voltage is 5V at a drain current of 250µA.