STB28NM50N The STMicroelectronics STB28NM50N is an N-Channel MOSFET designed for high voltage applications. It features a 500V drain-source voltage and a continuous drain current of 21A.
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STB28NM50N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB28NM50N is an N-Channel MOSFET designed for high voltage applications. It features a 500V drain-source voltage and a continuous drain current of 21A.
✓ Total Stock: 1,750 pcs
$ Price Range: $2.56

STB28NM50N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
750 pcs
750 pcs On Request 1 On Request On Request 15+ On Request On Request

STB28NM50N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB28NM50N Description

Short technical summary and product information.

The STMicroelectronics STB28NM50N is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for applications requiring high voltage handling, with a maximum drain-to-source voltage (Vdss) of 500V.

 

This MOSFET can handle a continuous drain current of 21A (Tc) and has a maximum power dissipation of 150W (Tc). Its on-resistance (Rds On) is a maximum of 158mOhm at 10.5A and 10V gate-source voltage. The gate charge (Qg) is a maximum of 50nC at 10V, and input capacitance (Ciss) is 1735pF at 25V.

 

The device operates at temperatures up to 150°C (TJ). It is available in a Surface Mount package, specifically the TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, also referred to as D2PAK. The gate-to-source voltage (Vgs) has a maximum rating of ±25V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. This component is suitable for various power switching and control applications where high voltage and moderate current are required.

STB28NM50N Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB28NM50N N-Channel MOSFET
Subcategory: N-Channel

STB28NM50N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB28NM50N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB28NM50N Features

  • 500V drain-to-source voltage rating.
  • 21A continuous drain current capability.
  • 150W maximum power dissipation.
  • Surface mount D2PAK package.
  • RoHS3 compliant component.

STB28NM50N Applications

  • Ideal for high-voltage power supplies.
  • Suitable for switching power converters.
  • Used in motor control circuits.
  • Applicable for power factor correction.

STB28NM50N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STB28NM50N?

500V maximum.

What is the continuous drain current rating?

21A at Tc.

What is the package type?

TO-263-3 (D2PAK) surface mount.

What is the maximum junction temperature?

150°C.

What is the gate threshold voltage?

4V maximum at 250µA.

What is the typical on-resistance?

158mOhm maximum at 10.5A, 10V.

What is the gate charge?

50nC maximum at 10V.

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