STB28N65M2 The STB28N65M2 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 650V drain-source voltage and 20A continuous current.
Mfr Part #:

STB28N65M2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STB28N65M2 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 650V drain-source voltage and 20A continuous current.
✓ Total Stock: 12,020 pcs
$ Price Range: $2.56

STB28N65M2 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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12,020 pcs
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STB28N65M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB28N65M2 Description

Short technical summary and product information.

The STMicroelectronics STB28N65M2 is an N-Channel power MOSFET designed for demanding applications. It features a high drain-to-source voltage rating of 650V and can handle a continuous drain current of 20A at a case temperature of Tc.

 

With a maximum power dissipation of 170W (Tc), this MOSFET is suitable for various power management tasks. Its on-resistance (Rds On) is rated at a maximum of 180mOhm at 10A and 10V gate-source voltage. The gate charge (Qg) is 35nC maximum at 10V, and input capacitance (Ciss) is 1440pF maximum at 100V.

 

The device operates at temperatures up to 150°C (TJ) and utilizes MOSFET (Metal Oxide) technology. It is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB format, designed for surface mounting.

 

This MOSFET is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under standard conditions. REACH status is unaffected.

STB28N65M2 Quick Information

Product Type: MOSFET
Canonical Name: STB28N65M2 N-Channel MOSFET
Subcategory: N-Channel

STB28N65M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB28N65M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB28N65M2 Features

  • 650V drain-to-source voltage rating.
  • 20A continuous drain current.
  • 170W maximum power dissipation.
  • Surface mount D2PAK package.
  • RoHS3 compliant.

STB28N65M2 Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for power factor correction.
  • Applicable in lighting systems.

STB28N65M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STB28N65M2?

The maximum drain-to-source voltage (Vdss) is 650V.

What is the continuous drain current of the STB28N65M2?

The continuous drain current is 20A.

What is the maximum power dissipation for this MOSFET?

The maximum power dissipation is 170W.

What is the on-resistance of the STB28N65M2?

The maximum on-resistance is 180mOhm at 10A and 10V.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the STB28N65M2 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

How is the STB28N65M2 mounted?

The STB28N65M2 is designed for surface mounting.

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