STB28N60M2 The STMicroelectronics STB28N60M2 is an N-Channel MOSFET designed for power applications. It features a 600V drain-to-source voltage and a 22A continuous drain current.
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STB28N60M2

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB28N60M2 is an N-Channel MOSFET designed for power applications. It features a 600V drain-to-source voltage and a 22A continuous drain current.
✓ Total Stock: 11,794 pcs
$ Price Range: $2.56

STB28N60M2 Available from 3 distributors

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6,020 pcs
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3,000 pcs
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STB28N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB28N60M2 Description

Short technical summary and product information.

The STMicroelectronics STB28N60M2 is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 600V. It offers a continuous drain current (Id) of 22A (Tc) and a maximum on-resistance (Rds On) of 150mOhm at 11A, 10V.

 

This MOSFET is suitable for surface mount applications, housed in a D²PAK (TO-263) package. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 36 nC at 10V and an input capacitance (Ciss) of 1440 pF at 100V.

 

The STB28N60M2 utilizes Metal Oxide Semiconductor technology. Its maximum power dissipation is rated at 170W (Tc). The device has a gate-to-source voltage (Vgs) maximum of ±25V and a gate-to-source threshold voltage (Vgs(th)) of 4V at 250µA.

STB28N60M2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB28N60M2 N-Channel MOSFET
Subcategory: N-Channel

STB28N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB28N60M2 Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB28N60M2 Features

  • 600V drain-to-source voltage.
  • 22A continuous drain current.
  • 150mOhm maximum Rds On.
  • Surface mount D2PAK package.
  • Operates to 150°C.

STB28N60M2 Applications

  • Ideal for industrial motor drive inverters.
  • Used in high-power DC-DC converter topologies.
  • Suitable for AC motor control systems.
  • Applied in welding equipment power stages.
  • Designed for uninterruptible power supply units.

STB28N60M2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STB28N60M2?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current of the STB28N60M2?

The continuous drain current (Id) is 22A.

What is the Rds On for the STB28N60M2?

The Rds On is a maximum of 150mOhm at 11A, 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STB28N60M2 in?

It is in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

How is the STB28N60M2 mounted?

It is a surface mount device.

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