STB26NM60N The STMicroelectronics STB26NM60N is an N-Channel MOSFET with a 600V drain-source voltage and 20A continuous drain current. It is designed for surface mount applications in a D2PAK package.
Mfr Part #:

STB26NM60N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB26NM60N is an N-Channel MOSFET with a 600V drain-source voltage and 20A continuous drain current. It is designed for surface mount applications in a D2PAK package.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB26NM60N Available from 1 distributor

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STB26NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB26NM60N Description

Short technical summary and product information.

The STMicroelectronics STB26NM60N is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 165mOhm at 10A and 10V, a gate charge (Qg) of 60 nC maximum at 10V, and an input capacitance (Ciss) of 1800 pF maximum at 50V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-to-source voltage (Vgs) is ±30V.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 140W (Tc). It utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in a surface mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, also known as D²PAK (TO-263).

 

The STB26NM60N is suitable for various power electronics designs requiring efficient switching and robust performance.

STB26NM60N Quick Information

Product Type: MOSFET
Series: MDmesh™ II
Canonical Name: STMicroelectronics STB26NM60N N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STB26NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB26NM60N Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB26NM60N Features

  • 600V drain-source voltage rating.
  • 20A continuous drain current capability.
  • 165mOhm maximum on-resistance.
  • 60 nC maximum gate charge.
  • Surface mount D2PAK package.

STB26NM60N Applications

  • Suitable for power switching applications.
  • Designed for efficient energy conversion.
  • Used in power supply circuits.
  • Ideal for motor control systems.
  • Applicable in industrial automation.

STB26NM60N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB26NM60N?

The maximum drain-source voltage (Vdss) for the STB26NM60N is 600V.

What is the continuous drain current of the STB26NM60N?

The continuous drain current (Id) for the STB26NM60N is 20A at 25°C.

What is the maximum on-resistance of the STB26NM60N?

The maximum on-resistance (Rds On) for the STB26NM60N is 165mOhm at 10A and 10V.

What is the package type for the STB26NM60N?

The STB26NM60N is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.

What is the operating temperature range for the STB26NM60N?

The STB26NM60N has an operating temperature range of 150°C (TJ).

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