| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB25NM60ND is a high-performance N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. It is designed for demanding power applications, offering a 600V drain-to-source voltage (Vdss) and a maximum continuous drain current of 21A at a case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 160mOhm at 10.5A and 10V, a gate charge (Qg) of 80 nC at 10V, and an input capacitance (Ciss) of 2400 pF at 50V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-to-source voltage is ±25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 160W (Tc). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.
The STB25NM60ND utilizes MOSFET (Metal Oxide) technology, providing efficient switching capabilities for various power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 21A at case temperature (Tc).
The maximum on-resistance (Rds On) is 160mOhm at 10.5A drain current and 10V gate drive.
The STB25NM60ND is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface-mount package.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at 250µA drain current.