| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,700 pcs
|
3700 pcs | On Request | 1 | On Request | On Request | 624 | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB25NM60N-1 is an N-channel power MOSFET manufactured by STMicroelectronics. It features a drain-to-source voltage rating of 600V and a continuous drain current of 21A. The device is housed in an I2PAK package, which is suitable for through-hole mounting and provides good thermal performance.
This MOSFET is designed for high-voltage switching applications such as power supplies, inverters, and motor control. The I2PAK package allows for efficient heat dissipation and is compatible with standard PCB layouts. The device is a single MOSFET with an N-channel configuration, making it suitable for use in a variety of power conversion circuits.
Key specifications include a 600V drain-source breakdown voltage and a 21A continuous drain current. The exact on-resistance and gate charge characteristics are not provided in the available data, but the part is intended for general-purpose high-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
I2PAK.
21A.
N-channel.