| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,815 pcs
|
18815 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB25NM60N is an N-channel enhancement-mode MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-to-source voltage of 600V and a continuous drain current rating of 21A at case temperature (Tc).
The device features a typical on-resistance of 160mOhm maximum at 10.5A drain current and 10V gate drive, enabling efficient power conversion. Gate charge is 84nC maximum at 10V, and input capacitance is 2400pF at 50V Vds. The threshold voltage is 4V maximum at 250µA drain current, and the maximum gate-source voltage is ±25V.
This MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly. It is commonly used in power supplies, DC-DC converters, motor drives, and other high-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 21A at case temperature (Tc).
The maximum on-resistance is 160mOhm at 10.5A drain current and 10V gate-source voltage.
The maximum gate charge (Qg) is 84nC at 10V gate-source voltage.
The maximum input capacitance (Ciss) is 2400pF at 50V drain-source voltage.
The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA drain current.
The maximum power dissipation is 160W at case temperature (Tc).