| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
493 pcs
|
493 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB25NM50N is an N-channel power MOSFET designed for switching applications. It utilizes MDmesh™ II Technology, offering low on-resistance and gate charge for high efficiency converters.
Key electrical specifications include a Drain-source Voltage (Vdss) of 500V, a continuous drain current of 22A at 25°C, and a maximum on-resistance of 140mOhm at 11A and 10V. The input capacitance is 2565pF at 25V, and the gate charge is 84nC at 10V. The device operates at a maximum junction temperature of 150°C and has a power dissipation of 160W at 25°C.
This MOSFET is available in a surface mount D2PAK package (TO-263-3). It is designed for demanding high efficiency converter applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
D2PAK (TO-263) surface mount package.
150°C.
140mOhm maximum at 11A, 10V.
84nC at 10V.
2565pF at 25V.
4V maximum at 250µA.