| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This STMicroelectronics STB25N80K5 is an N-channel power MOSFET with a high drain-source voltage rating of 800V and a continuous drain current capability of 19.5A at Tc. It features a low on-resistance of 260mOhm at 19.5A and 10V gate drive, with a maximum gate charge of 40nC.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 250W (Tc). It is constructed using Metal Oxide technology.
Designed for surface mounting, the STB25N80K5 is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB configuration. Its key electrical parameters include an input capacitance of 1600pF at 100V and a gate threshold voltage of 5V at 100µA. The maximum gate-source voltage is ±30V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
Surface mount D²PAK (TO-263) package.
-55°C to 150°C (junction temperature).
Maximum 260 mOhm at 19.5A and 10V gate drive.
Maximum 40 nC at 10V.
Maximum 1600 pF at 100 Vds.