| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB24NM60N is a power MOSFET from STMicroelectronics, categorized as an N-Channel FET. It is designed to handle a maximum drain-to-source voltage (Vdss) of 600V and can sustain a continuous drain current (Id) of 17A at 25°C. The device features a maximum on-resistance (Rds On) of 190mOhm at 8A and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 4V at 250µA.
With a maximum power dissipation of 125W (Tc), this MOSFET is suitable for various power applications. It operates within a temperature range of -55°C to 150°C (TJ). The input capacitance (Ciss) is rated at 1400pF at 50V, and the gate charge (Qg) is 46nC at 10V.
The STB24NM60N utilizes MOSFET (Metal Oxide) technology and is packaged in a surface-mount D2PAK (TO-263) package. The maximum gate-source voltage (Vgs) is ±30V, and the drive voltage is 10V. This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current (Id) is 17A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 190mOhm at Vgs=10V and Id=8A.
The operating junction temperature range is -55°C to 150°C.
The STB24NM60N is available in a surface-mount D2PAK (TO-263-3) package.
The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250µA.
The maximum power dissipation is 125W at case temperature.