SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 329 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The STMicroelectronics STB24NF10T4 is an N-Channel Power MOSFET utilizing STMicroelectronics' unique STripFET process. This process is specifically designed to minimize input capacitance and gate charge, making it suitable for advanced high-efficiency isolated DC-DC converters.
Key electrical characteristics include a maximum Drain-Source On-Resistance of 45mOhm at 20A and 10V, a typical gate charge of 75nC at 10V, and a typical input capacitance of 2500pF at 25V. The device operates within a temperature range of -55°C to 150°C TJ.
This MOSFET is designed for through-hole mounting and comes in a TO-247-3 package. Its features, such as minimized gate charge and very low intrinsic capacitances, contribute to excellent manufacturing repeatability and an excellent figure of merit (RDS*Qg). The device is 100% avalanche tested.
Applications include general switching applications where high efficiency and low power loss are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical gate charge is 75nC at 10V.
The maximum Drain-Source On-Resistance is 45mOhm when Id is 20A and Vgs is 10V.
The operating temperature range is -55°C to 150°C TJ.
The STB24NF10T4 is mounted through hole.
The STB24NF10T4 is supplied in a TO-247-3 package.
