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STB24N65M2 N-Channel MOSFET with 650V drain-source voltage rating and 16A continuous drain current. Features low on-resistance of 230mOhm and is offered in a surface-mount D2PAK package.
Mfr Part #:

STB24N65M2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel MOSFET with 650V drain-source voltage rating and 16A continuous drain current. Features low on-resistance of 230mOhm and is offered in a surface-mount D2PAK package.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB24N65M2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STB24N65M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB24N65M2 Description

Short technical summary and product information.

The STB24N65M2 is a 650V N-Channel Power MOSFET from STMicroelectronics. It is designed for high-efficiency power conversion applications. The device features a maximum drain current of 16A (at Tc) and an on-resistance of 230mOhm (max) at 8A and 10V gate drive. It utilizes advanced MOSFET technology for low gate charge (29nC at 10V) and low input capacitance (1060pF at 100V), enabling high switching performance. The device has a maximum power dissipation of 150W. Housed in a surface-mount D2PAK (TO-263) package, it is suitable for automated assembly. The operating junction temperature range is -55°C to 150°C.

STB24N65M2 Quick Information

Product Type: Single N-Channel MOSFET
Series: MDmesh M2
Canonical Name: STMicroelectronics STB24N65M2 N-Channel MOSFET, 16A, 650V, D2PAK
Subcategory: Single N-Channel MOSFET

STB24N65M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB24N65M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB24N65M2 Features

  • 650V maximum drain-source voltage rating.
  • 16A continuous drain current capability.
  • 230mOhm on-resistance at 10V gate drive.
  • 29nC gate charge for efficient switching.
  • Surface mount D2PAK package.

STB24N65M2 Applications

  • Used in high-voltage switching power supplies
  • Suitable for power factor correction circuits
  • Ideal for LED lighting drivers
  • Applied in motor control inverters
  • Used in DC-DC converter stages

STB24N65M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

650V

What is the package type?

Surface mount D2PAK (TO-263)

What is the operating temperature range?

-55°C to 150°C (junction)

What is the continuous drain current rating?

16A at Tc

What is the on-resistance?

230mOhm at 8A, 10V

What is the gate charge?

29nC at 10V

What is the input capacitance?

1060pF at 100V

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