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STB24N60M2 The STMicroelectronics STB24N60M2 is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-source voltage and 18A continuous current capability.
Mfr Part #:

STB24N60M2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB24N60M2 is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-source voltage and 18A continuous current capability.
✓ Total Stock: 49,020 pcs
$ Price Range: $2.56

STB24N60M2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
47,020 pcs
On Request
47020 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STB24N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB24N60M2 Description

Short technical summary and product information.

The STMicroelectronics STB24N60M2 is a power MOSFET with an N-Channel configuration. It is designed for high-voltage applications, offering a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 18A at a case temperature of 25°C.

 

This MOSFET has a maximum on-resistance (Rds On) of 190mOhm when measured at 9A drain current and 10V gate-source voltage. The gate charge (Qg) is 29nC maximum at 10V, and the input capacitance (Ciss) is 1060pF maximum at 100V.

 

Operating within a temperature range of -55°C to 150°C (TJ), the STB24N60M2 has a maximum power dissipation of 150W (Tc). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package and is designed for surface mounting.

 

Key electrical parameters include a maximum gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA. The technology used is MOSFET (Metal Oxide).

STB24N60M2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB24N60M2 N-Channel MOSFET
Subcategory: N-Channel

STB24N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB24N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB24N60M2 Features

  • 600V drain-to-source voltage rating.
  • 18A continuous drain current capability.
  • 190mOhm maximum on-resistance.
  • Surface mount D2PAK package.
  • Wide operating temperature range.

STB24N60M2 Applications

  • Suitable for high-voltage power applications.
  • Used in power supply circuits.
  • Ideal for switching applications.
  • Component in motor control systems.

STB24N60M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STB24N60M2?

600V.

What package is the STB24N60M2 available in?

Surface mount D2PAK (TO-263) package.

What is the operating temperature range of the STB24N60M2?

-55°C to 150°C junction temperature.

What is the continuous drain current of the STB24N60M2?

18A at case temperature.

What is the on-resistance of the STB24N60M2?

190mOhm maximum at 9A and 10V gate drive.

What is the gate charge of the STB24N60M2?

29nC maximum at 10V.

What is the input capacitance of the STB24N60M2?

1060pF maximum at 100V drain-source voltage.

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