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STB24N60DM2 The STMicroelectronics STB24N60DM2 is an N-Channel MOSFET designed for 600V applications with a continuous drain current of 18A. It features a low on-resistance and is available in a D2PAK surface mount package.
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STB24N60DM2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB24N60DM2 is an N-Channel MOSFET designed for 600V applications with a continuous drain current of 18A. It features a low on-resistance and is available in a D2PAK surface mount package.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB24N60DM2 Available from 1 distributor

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STB24N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB24N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STB24N60DM2 is an N-Channel MOSFET belonging to the FDmesh™ II Plus series. It is rated for a drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current of 18A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 200mOhm at 9A and 10V, a gate charge (Qg) of 29nC at 10V, and an input capacitance (Ciss) of 1055pF at 100V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, and the maximum gate-source voltage (Vgs) is ±25V.

 

This MOSFET has a maximum power dissipation of 150W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a D2PAK (TO-263) package, suitable for surface mounting.

 

The STB24N60DM2 is RoHS3 Compliant, offering a reliable solution for various power switching applications.

STB24N60DM2 Quick Information

Product Type: MOSFET
Series: FDmesh™ II Plus
Canonical Name: STMicroelectronics STB24N60DM2 N-Channel MOSFET
Subcategory: N-Channel

STB24N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB24N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB24N60DM2 Features

  • 600V drain-to-source voltage rating.
  • 18A continuous drain current capability.
  • Low 200mOhm maximum on-resistance.
  • D2PAK surface mount package.
  • RoHS3 Compliant.

STB24N60DM2 Applications

  • Suitable for high voltage power switching.
  • Used in power supply designs.
  • Ideal for motor control circuits.
  • Applicable in industrial automation.

STB24N60DM2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STB24N60DM2?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 18A.

What is the maximum on-resistance of the STB24N60DM2?

The maximum on-resistance (Rds On) is 200mOhm when tested at 9A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STB24N60DM2 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.

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