STB23NM60ND The STMicroelectronics STB23NM60ND is an N-Channel MOSFET designed for power applications. It features a 600V drain-to-source voltage and a 19.5A current rating.
Mfr Part #:

STB23NM60ND

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB23NM60ND is an N-Channel MOSFET designed for power applications. It features a 600V drain-to-source voltage and a 19.5A current rating.
✓ Total Stock: 50,000 pcs
$ Price Range: $2.56

STB23NM60ND Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
50,000 pcs
50000 pcs On Request 1 On Request On Request 13+ On Request On Request

STB23NM60ND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB23NM60ND Description

Short technical summary and product information.

The STMicroelectronics STB23NM60ND is a single N-Channel MOSFET with a maximum drain-to-source voltage of 600V and a continuous current rating of 19.5A. It utilizes MOSFET technology and is designed for surface mount applications in a D2PAK package.

 

Key electrical characteristics include a maximum Rds On of 180mOhm at 10A and 10V, an input capacitance of 2050pF at 50V, and a gate charge of 70nC at 10V. The gate-to-source voltage has a maximum rating of ±25V, with a gate threshold voltage of 5V at 250µA.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 150W (Tc). It is specified with RoHS3 compliance, Moisture Sensitivity Level 1, and REACH Unaffected status.

 

The D2PAK package is suitable for surface mounting, making it convenient for integration into various electronic circuits requiring robust power handling capabilities.

STB23NM60ND Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB23NM60ND N-Channel MOSFET
Subcategory: N-Channel

STB23NM60ND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB23NM60ND Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB23NM60ND Features

  • 600V drain-to-source voltage rating.
  • 19.5A continuous current capability.
  • 180mOhm maximum Rds On.
  • Surface mount D2PAK package.
  • RoHS3 compliant status.

STB23NM60ND Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for high voltage switching.
  • Applicable in power factor correction.

STB23NM60ND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STB23NM60ND?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous current rating of the STB23NM60ND MOSFET?

The continuous current rating is 19.5A.

What is the Rds On (Max) for the STB23NM60ND at 10A, 10V?

The maximum Rds On is 180mOhm at 10A, 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is up to 150°C (TJ).

What type of package is the STB23NM60ND in?

It is available in a D2PAK package for surface mounting.

Is the STB23NM60ND RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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