| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB23NM50N is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage (Vdss) of 500V and a continuous current rating of 17A (Tc).
This MOSFET has a low on-resistance (Rds On) of 190mOhm at 8.5A and 10V gate drive voltage. Its input capacitance (Ciss) is 1330pF at 50V, and gate charge (Qg) is 45nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, with a maximum gate-source voltage of ±25V.
Designed for surface mounting, the STB23NM50N comes in a D²PAK (TO-263) package. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 125W (Tc).
This component utilizes MOSFET (Metal Oxide) technology and is suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
17A at case temperature.
125W at case temperature.
190mOhm maximum at 8.5A, 10V gate drive.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (D2PAK). Surface mount.
150°C.
4V maximum at 250µA drain current.