STB23NM50N The STMicroelectronics STB23NM50N is an N-Channel MOSFET designed for power applications. It offers a 500V drain-source voltage and 17A continuous current.
Mfr Part #:

STB23NM50N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB23NM50N is an N-Channel MOSFET designed for power applications. It offers a 500V drain-source voltage and 17A continuous current.
✓ Total Stock: 2,000 pcs
$ Price Range: $2.56

STB23NM50N Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

STB23NM50N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB23NM50N Description

Short technical summary and product information.

The STMicroelectronics STB23NM50N is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage (Vdss) of 500V and a continuous current rating of 17A (Tc).

 

This MOSFET has a low on-resistance (Rds On) of 190mOhm at 8.5A and 10V gate drive voltage. Its input capacitance (Ciss) is 1330pF at 50V, and gate charge (Qg) is 45nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, with a maximum gate-source voltage of ±25V.

 

Designed for surface mounting, the STB23NM50N comes in a D²PAK (TO-263) package. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 125W (Tc).

 

This component utilizes MOSFET (Metal Oxide) technology and is suitable for various power switching applications.

STB23NM50N Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB23NM50N N-Channel MOSFET
Subcategory: N-Channel

STB23NM50N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB23NM50N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB23NM50N Features

  • 500V drain-source voltage rating.
  • 17A continuous current capability.
  • 190mOhm maximum on-resistance.
  • Surface mount D2PAK package.
  • 150°C maximum operating temperature.

STB23NM50N Applications

  • Suitable for power switching circuits.
  • Used in high voltage applications.
  • Ideal for power supply designs.
  • Efficient for motor control.

STB23NM50N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of STB23NM50N?

500V.

What is the continuous drain current rating?

17A at case temperature.

What is the maximum power dissipation?

125W at case temperature.

What is the on-resistance (Rds on) of STB23NM50N?

190mOhm maximum at 8.5A, 10V gate drive.

What package does STB23NM50N come in?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (D2PAK). Surface mount.

What is the maximum junction temperature?

150°C.

What is the gate threshold voltage?

4V maximum at 250µA drain current.

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