| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STB22N60M6 is a power MOSFET with an N-Channel configuration. It is rated for a maximum drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current of 15A at a case temperature (Tc).
The MOSFET offers a low on-resistance (Rds On) of 230mOhm at 7.5A and 10V gate-source voltage. Key electrical parameters include an input capacitance (Ciss) of 800pF at 100V and a gate charge (Qg) of 20nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4.75V at 250µA, with a maximum gate-source voltage of ±25V.
Designed for surface mounting, the component comes in a D²PAK (TO-263) package. It operates within a temperature range of -55°C to 150°C (TJ). The technology utilized is MOSFET (Metal Oxide), providing efficient switching capabilities.
Environmental compliance includes RoHS3 compliance and an MSL rating of 1. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current rating is 15A.
The maximum on-resistance (Rds On) is 230mOhm at 7.5A and 10V.
The STB22N60M6 is in a Surface Mount D2PAK (TO-263) package.
The operating temperature range is -55°C to 150°C (TJ).