| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | 820 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB21NM60N-1 is a second-generation MDmesh™ Power MOSFET featuring an N-channel configuration. It is designed for demanding high-efficiency switching applications.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 600V and a maximum on-resistance (Rds On) of 220mOhm at 8.5A and 10V gate-source voltage. The continuous drain current is rated at 17A at 25°C case temperature, with a maximum power dissipation of 140W at 25°C case temperature. The input capacitance (Ciss) is 1900pF at 50V Vds, and the gate charge (Qg) is a maximum of 66nC at 10V Vgs.
This MOSFET utilizes MDmesh™ technology, offering low on-resistance and gate charge for improved efficiency. It is 100% avalanche tested.
The STB21NM60N-1 is available in an I2PAK package with through-hole mounting. The operating junction temperature ranges from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 17A at a case temperature of 25°C and 10A at 100°C.
The maximum on-resistance is 220 mOhm at a gate-source voltage of 10V and drain current of 8.5A.
The operating junction temperature range is -55°C to 150°C.
It is available in a through-hole I2PAK package (TO-262-3 long leads, I²Pak, TO-220AA).
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The maximum power dissipation is 140W at a case temperature of 25°C.