| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 734 | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB21NM50N-1 is a second-generation MDmesh™ Power MOSFET designed for demanding high-efficiency converter applications. It features an N-channel configuration with a maximum drain-source voltage (Vdss) of 500V and a continuous drain current of 18A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 190mOhm maximum at 9A and 10V, a gate threshold voltage (Vgs(th)) of 4V at 250µA, and a gate charge (Qg) of 65nC maximum at 10V. The device also boasts a low input capacitance (Ciss) of 1950pF maximum at 25V.
With a maximum power dissipation of 140W at 25°C and an operating junction temperature up to 150°C, this MOSFET is suitable for various switching applications. It is housed in an I2PAK package, designed for through-hole mounting.
This MOSFET is built using ST's MDmesh Technology, which combines a new vertical structure with a strip layout to achieve low on-resistance and gate charge, making it ideal for high-efficiency power conversion.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STB21NM50N-1 is 500V.
The continuous drain current rating is 18A at a case temperature of 25°C.
The maximum on-resistance is 190mOhm when measured at 9A drain current and 10V gate-source voltage.
The maximum operating junction temperature (Tj) is 150°C.
The STB21NM50N-1 is supplied in an I2PAK package, also referred to as TO-262-3 Long Leads or TO-262AA.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.